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Neodymium doped Gadolinium Vanadate (Nd:GdVO4) is a promising material for diode pumped laser. Similar to Nd:YVO4 crystal, Nd:GdVO4 crystal also exhibits high gain, low threshold, and high absorption coefficients at pumping wavelengths, which result from the excellent fit of the neodymium dopant in the crystal lattice. Nd:GdVO4 has the additional advantage over Nd:YVO4 of a much higher thermal conductivity. With advanced technology on growing and manufacturing high optical quality Nd:GdVO4 crystals, we can provide a wide variety of finished crystals, our general Nd:GdVO4 production capabilities include.
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capabilities include: |
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1) |
Nd dopant concentration: 0.2---3.0 atm% |
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2) |
Dopant tolerance: within 10% of concentration. |
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3) |
Diameter : 0.02 ~ 20mm |
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4) |
Length: 0.02 ~ 20mm |
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1) |
Orientation: |
a-cut crystalline direction(+/-0.20) |
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2) |
Dimensional tolerance: |
+/-0.1mm(typical)High precision +/-0.005mm can be available upon request. |
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3) |
Wavefront Distortion: |
<l/8@633nm |
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4) |
Surface quality: |
better than 20/10 Scratch/Dig per MIL-O-1380A |
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5) |
Parallelism: |
< 10 arc seconds |
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6) |
Perpendicularity: |
< 5 arc minutes |
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7) |
Surface flatness: |
<ll/10 at 632.8nm |
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8) |
Clear aperture: |
Central 95% |
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9) |
Chamfer: |
0.15x450 |
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10) |
Damage threshold: |
over 15J/cm2 (rods without coating) over 700 MW/cm2 (coating) |
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11) |
Coating: |
AR@1063nm, R< 0.1% & HT@808nm, T>95%(see coating 3-1 )
HR@1063nm, R>99.8% & HT@808nm, T>95%(see coating 3-2 )
HR@1063nm, R>99.8%, HR@532 nm, R>99% & HT@808 nm, T>95%
AR@1063 nm, R<0.1%(see coating 3-3 ) |
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coating 3-1 |
coating 3-2 |
coating 3-3 |
| Notes: |
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To inquiry or order a finished Nd:GdVO4 laser crystals, please specify the specification listed above, for common online_ordering, we only need to know the main specification: Nd-dopant concentration, sizes, surface quality and coating. For special request, please specify specification in details for evaluation and fabrication. |
| Physical and Optical Properties |
| Crystal Structure |
Zircon Tetragonal, space group D4h, a=b=7.21, c=6.35 |
| Melting Point |
1780°C |
| Density |
5.47g/cm 3 |
| Mohs Hardness |
Glass-like, ~ 5 |
| Thermal Expansion Coefficient |
aa=1.5x10 -6 /K, ac=7.3x10 -6 /K |
| Thermal Conductivity Coefficient |
11.7 W/m/K <110> |
Absorption Curve |
Fluorescence Spectra Curve |
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Crystal Structure |
Zircon Tetragonal, space group D4h, a=b=7.21, c=6.35 |
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Melting Point |
1780°C |
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Density |
5.47g/ cm3 |
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Mohs Hardness |
Glass-like, ~ 5 |
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Thermal Expansion Coefficient |
aa=1.5x10-6/K, ac=7.3x10-6/K |
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Thermal Conductivity Coefficient |
11.7 W/m/K <110> |
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Peak Absorption Wavelength |
808.5 nm |
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Lasing Wavelength |
912.6 nm, 1063.1 nm, 1341.3 nm |
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Crystal Class |
Positive uniaxial, no=na=nb ne=ncno=1.9854, ne=2.1981,@ 1064nmno=2.0382, ne=2.2929, @ 532nmno=1.9977, ne=2.2198, @ 808nm |
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Thermal Optical Coefficient |
dn/dT=4.7x10-6/K |
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Stimulated Emission Cross-Section |
7.60x10-19cm2 , @1064 nm |
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Fluorescent LifetimeNd=1.2 atm% |
95 ms @ 808 nm |
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Loss Coefficient |
0.003 cm-1@ 1064 nm |
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Absorption CoefficienceNd=1.2 atm% |
74 cm-1 @ 808 nm |
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Absorption LengthNd=1.2 atm% |
0.18 mm @ 808 nm |
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Intrinsic LossNd=1.2 atm% |
Less 0.1% cm-1 , @1064 nm |
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Line width |
0.6 nm |
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Polarized Laser Emission |
p parallel to optic axis (c-axis) |
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Diode Pumped Optical to Optical Efficiency |
> 60% |
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Sellmeier Equation (for pure GdVO4 crystals) |
ne2=4.734369 + 0.1216149/(l2 - 0.0523664) - 0.013927l2 no2=3.8987165+0.05990622/(l2 - 0.0514395) - 0.011319l2 |
| Nd:GdVO4 properties compare with Nd:YVO4 |
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Nd:GdVO4, 1.2 atm% Nd |
Nd:YVO4 1 atm% Nd |
| Melting temperature (T°C) |
1780 |
1825 |
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Fluorescence lifetime ( t ) |
95 m s |
100 m s |
| Stimulated emission cross section ( s ) |
7.6x10 -19 cm -2 |
15.6x10 -19 cm -2 ( p -pol) |
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Absorption coefficient |
78cm -1 |
31.2 cm -1 |
| La |
0.18mm |
0.32mm |
| Threshold power |
70mw |
78mw |
| Conversion efficiency h s |
50% |
48.6% |
| Thermal conductivity coefficient |
11.7w/m/k |
5.10w/m/k | |
